Physicists achieved a robust and reliable magnetization switching process by domain wall displacement without any applied fields. The effect is observed in tiny asymmetric permalloy rings and may pave ...

This process is repeated several times, whereby the time interval between the first "pump" pulse and the subsequent "probe" pulse is continually extended. As a result, a time series of reflection data ...

The reliability of data storage and writing speed in advanced magnetic devices depend on drastic, complex changes in microscopic magnetic domain structures. However, it is extremely challenging to ...

The rapid increase in electric vehicle adoption in recent years has highlighted a crucial issue: the energy conversion efficiency of electric motors. In electric motors, iron loss or magnetic ...

MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), ...

Engineers at Rice University in the U.S. have developed a new room-temperature multiferroic material ...