Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

Over the past five years, the number of photovoltaic installations has increased significantly, while the cost continues to drop. However, the levelized cost of electricity for any photovoltaic ...

A range of four H-bridge MOSFET packages aims to simplify DC fan and CCFL inverter circuits by reducing both component count and PCB size in space-constrained ...

NEW YORK, June 13, 2022 /PRNewswire/ -- The low-voltage MOSFET market size is set to grow by USD 1.18 billion from 2020 to 2025, progressing at a CAGR of 4.43% as per the latest market report by ...

MOSFET is a powerful semiconductor that is employed as an electrical component to control loads as necessary. In addition to replacing bipolar junction transistors (BJTs) at a low cost, it also offers ...