EDN

IGBT Improved Switching Performance and Efficiency

IXYS announced an expansion of its 650 V XPT IGBT product portfolio. IXYS announced an expansion of its 650 V XPT IGBT product portfolio. With current ratings ranging from 16 A to 200 A, these new ...
Science Daily

Remaining switched on to silicon-based electronics

It has been assumed that we are approaching the performance limits of silicon-based power electronics. Researchers have now challenged this belief by developing a miniaturized silicon insulated gate ...
EDN

STMicroelectronics Advances IGBT Switching Performance for Higher Efficiency and Reduced Size in Energy-Saving Ballasts and Converters

STMicroelectronics, has introduced IGBTs that use innovative and efficient lifetime-control techniques to reduce energy loss during turn off. New devices, including the STGxL6NC60D 600V PowerMESH™ ...
Electronic Design

Optocouplers Support High Power, High Speed Switching Inverters

Gates of insulated gate bipolar transistors (IGBTs) must be driven with stable on and off drive voltages and with relatively high current levels to allow rapid switching between their on and off ...
Electronic Design

Optocoupler Integrates Fast Switching And IGBT Protection

Dusseldorf, Germany: The PS9402 insulated gate bipolar transistor (IGBT) drive optocoupler from Renesas Electronics integrates IGBT protection. It comprises a gallium-aluminium-arsenide (GaAlAs) LED ...