International Rectifier announced the introduction of the AUIRGDC0250, an automotive-qualified IGBT optimized for soft switching applications such as Positive Temperature Coefficient (PTC) heater ...
The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances to this ...
IXYS announced an expansion of its 650 V XPT IGBT product portfolio. IXYS announced an expansion of its 650 V XPT IGBT product portfolio. With current ratings ranging from 16 A to 200 A, these new ...
An IGBT with an integrated reverse recovery diode from Toshiba Electronics Europe offers an impressive voltage rating of 1800 V. The GT40WR21 N-channel RC-IGBT (Reverse Conducting IGBT) consists of a ...
The most prevalent reason for IGBT failure in voltage-source inverter (VSI) is thermal stress, which is influenced by the topology and modulation technique adopted. Hence, it is crucial to understand ...
Vishay Intertechnology Trench PT and FS IGBT Platform Reduces Conduction and Switching Losses for High Efficiency 600 V and 650 V IGBTs Offer Low VCE (ON) and Fast and Soft Switching for Motor Drives, ...
(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...
SHENZHEN, GUANGDONG, CHINA, June 22, 2026 /EINPresswire.com/ -- In a rapidly evolving semiconductor landscape, GNS ...
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