Nature

Silicon-Germanium Heterojunction Bipolar Transistors and Radiation Effects

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
EurekAlert!

Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared

Computer vision is a core technology that enables emerging applications such as autonomous driving, intelligent robotics, and smart manufacturing. Neuromorphic vision computing dramatically breaks the ...
EurekAlert!

Light-modulated graphene-organic heterojunction transistors realizing photocurrent logic changes

Since graphene has a low absorption coefficient in the absorption band, researchers generally use graphene as a carrier collection layer, and look for another strong light-absorbing material as the ...
Semiconductor Engineering

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors

Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...
NextBigFuture

Si–Gr–Ge Transistor Made for Better Terahertz Electronics

A Si–Gr–Ge transistor has been demonstrated. The Schottky emitter provides an emitter charging time of ~118 ps with a current of 692 A cm−2 and a capacitance of 41 nF cm−2, which is expected to ...
SpaceNews

New material structure produces world’s fastest transistor

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...