Business Wire

Transphorm Strengthens 900 V GaN Portfolio with Second FET

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today introduced its ...
Business Wire

Transphorm Releases New GaN FET Reliability Ratings, Now Segmented by Power Level

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
EDN

TI expands GaN FET family

Texas Instruments Inc. (TI) has expanded its low-power gallium nitride (GaN) portfolio, with a new family of GaN field-effect transistors (FETs). These GaN FET devices can improve power density and ...
Electronic Design

Infineon Introduces First GaN Power FET to Integrate Schottky Diode

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
WRIC

First GaN FET with 1 mΩ On-Resistance Announced by EPC

EL SEGUNDO, CALIFORNIA, UNITED STATES, February 27, 2024 /EINPresswire.com/ -- EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm x 5 mm QFN package ...
EDN

GaN Enables Efficient Systems with High Power Density

Gallium nitride(GaN) is a popular topic in the power electronics industry, as it enables highly efficient designs for applications such as telecom power supplies; electric vehicle charging; heating, ...
Electronic Design

A New Generation of GaN Power ICs Mimic Silicon MOSFETs

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
ecoustics

HiFi Rose’s RA280 Integrated Amplifier Features GaN FET Technology and A Much Lower Price Than The Flagship RA180

The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...
WGN Radio

Industry-Leading 300 V Rad-Hard GaN FET for Higher Voltage Satellite Power Systems Now Available from EPC Space

The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers ...
Semiconductor Engineering

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...