Bias Temperature Instability (BTI) is a pervasive ageing phenomenon in metal-oxide-semiconductor field-effect transistors (MOSFETs), manifesting as a gradual shift of the threshold voltage under ...
A research team led by Dr. Jang Sung-roc at the Electrophysics Research Center of the Korea Electrotechnology Research Institute (KERI) has developed a ‘tailored pulsed power modulator for bias’, ...
Standard electronic design automation (EDA) tools can be used to produce a semiconductor layout, which can be used to manufacture a device with targeted performance specifications. Unfortunately, ...
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