The AI era needs better memory solutions, and Imec is looking to fill the void ...
NEW YORK, NEW YORK - DECEMBER 31: Times Square sits empty while fireworks and confetti are displayed at the 2021 New Year's Eve celebration in Times Square on December 31, 2020 in New York City.
Use left and right arrow keys to seek audio. Micron has just unveiled the first client SSD shipping with over 200 layers of NAND flash, with the introduction of the new Micron 2550 SSD that delivers ...
Micron has announced that it is sending samples of its latest Universal Flash Storage (UFS) 4.0 ICs to smart device makers. Devices using these new NAND chips will benefit from double speed transfers ...
There has been a lot of chatter in the market that investors need to be careful of memory stocks following their strong ...
To store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be studied in greater detail. By investigating new approaches to making digital ...
WDC gave keynote talks by Alper Ilkbahar and Siva Sivaram at the 2023 FMS. In the first talk they discussed their CMOS Bonded Array technology where they create separate wafers for the NAND flash ...
Why serial NAND flash memory is an alternative to serial NOR flash memory. What kinds of applications are targeted by each memory type? Serial NOR flash memory has been a mainstay in low-pin ...
Why it matters: Western Digital dropped a bombshell during a recent investor presentation. The storage giant has teased the world's first 2Tb 3D quad-level cell NAND flash memory die. The chip dwarfs ...
According to sources interviewed by The Elec, mass production will take place in existing fabs, which currently produce 321-layer V9 NAND. Inside the company, the 375-layer ...
Use left and right arrow keys to seek audio. Samsung has teased that its next-gen 400-layer V-NAND will store more data, more performance, and feature higher reliability through future-gen V-NAND ...
(a) Schematic of the concealable PUF using V-NAND flash memory.(b) Circuit diagram of V-NAND flash memory.(c) Description of the GIDL erase method. Seoul National University College of Engineering ...